Operational Trans conductance Amplifiers:Filter Applications with Low-Voltage Highly Linear OTAs.

Filter Applications with Low-Voltage Highly Linear OTAs

Usually, Gm-C filters are considered suitable candidates for high-speed and low-power applications. Compared with the SC op-amp and RC op-amp techniques, the applicability of the Gm-C filter is limited by the low dynamic range and medium, even poor, linearity. A low-voltage, highly linear voltage- controlled transconductor [14, 15] shown in Figure 25.24 is used to implement a low-voltage, Gm-C all-pass adaptive forward equalizer (FE) stage operating at 125 Mbps. The adaptive forward equalizer is a part of a larger repeater/transceiver that enables IEEE 1394b transceivers to communicate over variable length of UTP-5 cables for up to 100 m. The repeater receives the data from one IEEE 1394b transceiver and retransmits it over the UTP-5 cable. On the other end of the cable, another repeater is used to receive the data (using the equalizer), and sends it to another IEEE 1394b transceiver. The equalizer is a cascade of two stages of the Gm-C stage shown in Figure 25.25. The control voltage is used to adapt the Gm of the transconductors, and consequently change the location of the poles in the forward equalizer. The control voltage is generated using an adaptive loop that estimates the attenuation introduced by the cable (which is a function of the cable length) and adjusts the response of the forward equalizer accordingly. To meet the jitter specification required for adequate performance of transceivers, the transconductor used in the forward equalizer stage has to have a THD of 30 dB or better at an input voltage range from 0 to 500 mV and data rate of 125 Mbps. Figure 25.26 shows the frequency response of the forward

Operational Transconductance Amplifiers-0331

Operational Transconductance Amplifiers-0332

equalizer as a function of control voltage. Note that the longer the cable is, the higher the control voltage becomes. The equalizer was implemented in a typical 180-nm digital CMOS process with a nominal supply voltage of 1.8 V, and adequate performance was achieved across process corners and temperature range of –40 to 125°C at supply voltage as low as 1.6 V. The transconductor occupied an area of 1945 µm2, and consumed an average power of 418 µW at 125 Mbps.

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