CMOS:Layout of CMOS.

Layout of CMOS

Layout of CMOS logic networks is more complex than logic networks where only nMOSFETs or pMOSFETs are used because in CMOS networks, nMOSFETs and pMOSFETs need to be fabricated with different materials. This makes layout of CMOS complicated. We often need to consider appropriate connection configuration of MOSFETs inside each logic gate and a logic network such that speed or area is optimized.

When we want to raise the speed, the switching speed of the pMOS subcircuit should be comparable to that of the nMOS subcircuit. Since the mobility of electrons is roughly 2.5 times higher than that of holes, the channel width W of p-channel MOSFETs must be much wider (often 1.5 to 2 times because the width can be made smaller than 2.5 times due to different doping levels) than that of n-channel MOSFETs (which work based on electrons) in order to compensate for the low speed of p-channel MOSFETs (which work based on holes) if the same channel length is used in each. Thus, for high-speed applications, NAND logic gates such as Figure 39.3(a) are preferred to NOR logic gates, because the channel width of p-channel MOSFETs in series in a NOR logic gate such as Figure 39.3(b) must be further increased such that the parasitic capacitance C can be charged up in a shorter time with low series resistance of these p-channel MOSFETs.

When designers are satisfied with low speed, the same channel width is chosen for every p-channel MOSFET as for n-channel MOSFETs, since a CMOS logic gate requires already more area than a pMOS or nMOS logic gate and a further increase by increasing the channel width is not desirable unless really necessary.

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