Flash Memories:Basic Flash Memory Device Structures.

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Basic Flash Memory Device Structures
n-Channel Flash Cell

Based on the concept proposed by researchers at Toshiba Corp., the developments in Flash memory have burgeoned since the end of 1980s. There are three categories of device structures based on the n-channel MOS structure. Besides the triple polysilicon Flash cell, the most popular Flash cell structures are the ETOX cell and the split-gate cell.

Flash Memories-0613

In 1985, Mukherjee et al. [7,9] proposed a source-erase Flash cell called the ETOX (EPROM with Tunnel OXide). This cell structure is the same as that of the UV-EPROM, as shown in Figure 54.6, but with a thin tunnel oxide layer. The cell is programmed by CHEI and erased by applying a high voltage at the source terminal.

A split-gate memory cell was proposed by Samachisa et al. in 1987 [8]. This split-gate Flash cell with a drain-erase type has two polysilicon layers, as shown in Figure 54.7. The cell can be regarded as two transistors in series. One is a floating gate memory, which is similar to an EPROM cell; the other, which is used as a select transistor, is an enhancement transistor controlled by the control gate.

p-Channel Flash Cell

The p-channel Flash memory cell was first proposed by Hsu et al. in 1992 [9]. Recently, several studies have been done on this device structure [10–13]. This Flash cell structure is similar to the ETOX cell but with p-channel. The erase mechanism is still by FN tunneling. As to the electron injection, there are two injection schemes that can be employed: CHEI and BBHE (Band-to-Band tunneling induced Hot Electron injection) [11]. The p-channel Flash cell features high electron injection efficiency, scalability, immunity to the hot hole injection and reduced oxide field during programming. Based on these advantages, the p-channel Flash memory cell seems to reveal Flash Memories-0614

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