Power IC Technologies:High-Temperature Operation of SOI Power ICs

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High-Temperature Operation of SOI Power ICs

The leakage current of SOI devices simply reduces as the SOI layer becomes thinner, as seen in Figure 7.44 [27]. Small leakage current enables high-temperature operation of SOI power ICs. It was experimentally shown that IGBTs can be operated at a switching frequency of 20 kHz at 200°C, if they are fabricated in thin SOI of less than 5 µm. Maximum operating temperature of analog circuits in SOI increases as the SOI layer becomes thinner. Figure 7.45 shows the output voltage of bandgap reference circuits as a function of temperature with SOI thickness as a parameter. In the circuits, each device was not trench-isolated. If all the devices are trench-isolated, much higher temperature operation can be expected, as shown later.

The operation of 250 V, 0.5 A three-phase single-chip inverter ICs at 200°C, fabricated in 5-µm-thick trench-isolated SOI layer, was demonstrated [35]. CMOS circuits on SOI were found to be capable of operating at 300°C. CMOS-based analog circuits with a minimum number of bipolar transistors were adopted. It was found that the bandgap reference circuit operated at 250°C. A DC brushless motor was successfully operated by the single-chip inverter IC at 200°C. The carrier frequency was 20 kHz.

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