CMOS/BiCMOS Technology:BiCMOS Technology.
BiCMOS Technology
Development of BiCMOS technology began in the early 1980s. In general, bipolar devices are attractive because of their high speed, better gain, better driving capability, and low wide-band noise properties that allow high-quality analog performance. CMOS is particularly attractive for digital applications because of its low power and high packing density. Thus the combination would not only lead to the replacement and improvement of existing ICs but would also provide access to completely new circuits.
Figure 2.25 shows a typical BiCMOS structure [112]. Generally, BiCMOS has vertical npn bipolar junction transistor, lateral pnp transistor, and CMOS on the same chip. Furthermore, if additional mask steps are allowed, passive devices are integrated, as described in the previous section. The main feature of the BiCMOS structure is the existence of a buried layer because bipolar processes require an epitaxial layer grown on a heavily doped n+ subcollector to reduce collector resistance.
Figure 2.26 shows typical process flow of BiCMOS. This is the simplest arrangement for incorporating bipolar devices and a kind of low-cost BiCMOS. Here, the BiCMOS process is completed with minimum additional process steps required to form the npn bipolar device, transforming the CMOS baseline process to a full BiCMOS technology. For this purpose, many processes are merged. p Tub of n-MOSFET shares an isolation of bipolar devices, n tub of p-MOSFET device is used for the collector, the n+ source and drain are used for the emitter regions and collector contacts, and also extrinsic base contacts have the p+ source and drain of PMOS device for common use.
Recently, there have been two significant uses of BiCMOS technology. One is high-performance MPU [113] by using the high driving capability of bipolar transistor, the other is mixed-signal products that utilize the excellent analog performance of bipolar transistor, as shown in Table 2.2.
For high-performance MPU, merged processes were commonly used, and the mature version of the MPU product has been replaced by CMOS LSI. However, this application is becoming less popular now with reduction in the supply voltage. Mixed-signal BiCMOS requires high performance, especially with respect to fT , fmax, and low-noise figure. Hence, double polysilicon structure with silicon [114] or SiGe [115–120] epitaxial base with trench isolation technology is used. Recently, ultra-high cutoff frequency SiGe heterojunction bipolar transistor (HBT) BiCMOS [121,122] and SiGe:C HBT BiCMOS [123–126] are reported, and design rule is shrunk to 90 nm CMOS technology [127].
Fabrication cost of BiCMOS is a serious problem, and thus a low-cost mixed-signal BiCMOS process [128] has also been proposed.
Modeling issue of BiCMOS technology is the same as that of bipolar junction transistor and CMOS devices. In the case of bipolar, the Gummel-Poon [129] model is very useful for circuit simulation, and advanced model such as VBIC [130] can also be applied.
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