CMOS/BiCMOS Technology:BiCMOS Technology.
BiCMOS Technology Development of BiCMOS technology began in the early 1980s. In general, bipolar devices are attractive because of their high speed, better gain, better driving capability, and low wide-band noise properties that allow high-quality analog performance. CMOS is particularly attractive for digital applications because of its low power and high packing density. Thus the combination would not only lead to the replacement and improvement of existing ICs but would also provide access to completely new circuits. Figure 2.25 shows a typical BiCMOS structure [112]. Generally, BiCMOS has vertical npn bipolar junction transistor, lateral pnp transistor, and CMOS on the same chip. Furthermore, if additional mask steps are allowed, passive devices are integrated, as described in the previous section. The main feature of the BiCMOS structure is the existence of a buried layer because bipolar processes require an epitaxial layer grown on a heavily doped n+ subcollector to reduce co...
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